PBSS5350D,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.

PBSS5350D,115 Features

the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS5350D,115 Applications

There are a lot of Nexperia USA Inc. PBSS5350D,115 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface