NSVMMBT2907AWT1G Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -400mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 200MHz.Maximum collector currents can be below 600mA volts.
NSVMMBT2907AWT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
NSVMMBT2907AWT1G Applications
There are a lot of ON Semiconductor NSVMMBT2907AWT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
