MMBTA06WT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of 250mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.A transition frequency of 100MHz is present in the part.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 500mA volts is possible.

MMBTA06WT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MMBTA06WT1G Applications

There are a lot of ON Semiconductor MMBTA06WT1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting