ZTX649STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.A constant collector voltage of 2A is necessary for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 150MHz.A maximum collector current of 2A volts can be achieved.
ZTX649STZ Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 150MHz
ZTX649STZ Applications
There are a lot of Diodes Incorporated ZTX649STZ applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
