2SC3648S-TD-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 25mA, 250mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor can be broken down at a voltage of 160V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.

2SC3648S-TD-E Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at 6V

2SC3648S-TD-E Applications

There are a lot of ON Semiconductor 2SC3648S-TD-E applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface