QST3TR Overview

In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 40mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

QST3TR Features

the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz

QST3TR Applications

There are a lot of ROHM Semiconductor QST3TR applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver