KSD5041RTA Overview

This device has a DC current gain of 340 @ 500mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 3A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.150MHz is present in the transition frequency.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 5A volts.

KSD5041RTA Features

the DC current gain for this device is 340 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz

KSD5041RTA Applications

There are a lot of ON Semiconductor KSD5041RTA applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface