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2N3585 PBFREE

2N3585 PBFREE

2N3585 PBFREE

Central Semiconductor Corp

2N3585 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3585 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Operating Temperature-65°C~200°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 35W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 10V
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 750mV @ 125mA, 1A
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 10MHz
RoHS StatusROHS3 Compliant
In-Stock:560 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.22000$13.22
500$13.0878$6543.9
1000$12.9556$12955.6
1500$12.8234$19235.1
2000$12.6912$25382.4
2500$12.559$31397.5

2N3585 PBFREE Product Details

2N3585 PBFREE Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 10V.A VCE saturation (Max) of 750mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A 300V maximal voltage - Collector Emitter Breakdown is present in the device.

2N3585 PBFREE Features


the DC current gain for this device is 25 @ 1A 10V
the vce saturation(Max) is 750mV @ 125mA, 1A

2N3585 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3585 PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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