2N3585 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3585 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
35W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 10V
Current - Collector Cutoff (Max)
5mA
Vce Saturation (Max) @ Ib, Ic
750mV @ 125mA, 1A
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
10MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.22000
$13.22
500
$13.0878
$6543.9
1000
$12.9556
$12955.6
1500
$12.8234
$19235.1
2000
$12.6912
$25382.4
2500
$12.559
$31397.5
2N3585 PBFREE Product Details
2N3585 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 10V.A VCE saturation (Max) of 750mV @ 125mA, 1A means Ic has reached its maximum value(saturated).A 300V maximal voltage - Collector Emitter Breakdown is present in the device.
2N3585 PBFREE Features
the DC current gain for this device is 25 @ 1A 10V the vce saturation(Max) is 750mV @ 125mA, 1A
2N3585 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3585 PBFREE applications of single BJT transistors.