2SD1207S-AE Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, it can handle voltages as low as 50V volts.3-MP is the supplier device package for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.In extreme cases, the collector current can be as low as 2A volts.
2SD1207S-AE Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the supplier device package of 3-MP
2SD1207S-AE Applications
There are a lot of ON Semiconductor 2SD1207S-AE applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
