NSV60201LT1G Overview
DC current gain in this device equals 150 @ 1A 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 140mV @ 200mA, 2A.The base voltage of the emitter can be kept at 8V to achieve high efficiency.As a result, the part has a transition frequency of 100MHz.A maximum collector current of 2A volts is possible.
NSV60201LT1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz
NSV60201LT1G Applications
There are a lot of ON Semiconductor NSV60201LT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
