KSB1151YS Overview

In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -140mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.Keeping the emitter base voltage at -7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 3MHz.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

KSB1151YS Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 3MHz

KSB1151YS Applications

There are a lot of ON Semiconductor KSB1151YS applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface