PHPT61003NYX Overview

In this device, the DC current gain is 80 @ 1A 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 3A to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.The maximum collector current is 3A volts.

PHPT61003NYX Features

the DC current gain for this device is 80 @ 1A 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 330mV @ 300mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz

PHPT61003NYX Applications

There are a lot of Nexperia USA Inc. PHPT61003NYX applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface