SBC817-25LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.The emitter base voltage can be kept at 5V for high efficiency.In the part, the transition frequency is 100MHz.Maximum collector currents can be below 500mA volts.
SBC817-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-25LT3G Applications
There are a lot of ON Semiconductor SBC817-25LT3G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
