2SD1802S-E Overview

This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor can be broken down at a voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SD1802S-E Features

the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SD1802S-E Applications

There are a lot of ON Semiconductor 2SD1802S-E applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver