2SD1802T-TL-E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 190μV, it offers maximum design flexibility.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Maximum collector currents can be below 3A volts.

2SD1802T-TL-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 190μV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SD1802T-TL-E Applications

There are a lot of ON Semiconductor 2SD1802T-TL-E applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver