2SD1802T-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1802T-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2SD1802
Pin Count
3
Element Configuration
Single
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
3A
Max Frequency
150MHz
Collector Emitter Saturation Voltage
190μV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Height
2.3mm
Length
6.5mm
Width
5.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.918383
$6.918383
10
$6.526777
$65.26777
100
$6.157336
$615.7336
500
$5.808808
$2904.404
1000
$5.480007
$5480.007
2SD1802T-TL-E Product Details
2SD1802T-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 190μV, it offers maximum design flexibility.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Maximum collector currents can be below 3A volts.
2SD1802T-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of 190μV the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SD1802T-TL-E Applications
There are a lot of ON Semiconductor 2SD1802T-TL-E applications of single BJT transistors.