BC638TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.The part has a transition frequency of 100MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BC638TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
BC638TA Applications
There are a lot of ON Semiconductor BC638TA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
