Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC807-25LT3G

BC807-25LT3G

BC807-25LT3G

ON Semiconductor

BC807-25LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC807-25LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC807
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 160
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.019551 $0.019551
500 $0.014375 $7.1875
1000 $0.011980 $11.98
2000 $0.010990 $21.98
5000 $0.010272 $51.36
10000 $0.009555 $95.55
15000 $0.009240 $138.6
50000 $0.009086 $454.3
BC807-25LT3G Product Details

BC807-25LT3G Overview


DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 500mA volts can be achieved.

BC807-25LT3G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-25LT3G Applications


There are a lot of ON Semiconductor BC807-25LT3G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News