BC807-25LT3G Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 500mA volts can be achieved.
BC807-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25LT3G Applications
There are a lot of ON Semiconductor BC807-25LT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
