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BC808-25LT1

BC808-25LT1

BC808-25LT1

ON Semiconductor

BC808-25LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC808-25LT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC808
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) 5V
hFE Min 160
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
BC808-25LT1 Product Details

BC808-25LT1 Overview


DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC808-25LT1 Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC808-25LT1 Applications


There are a lot of ON Semiconductor BC808-25LT1 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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