Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD442

BD442

BD442

ON Semiconductor

BD442 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD442 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 36W
Base Part Number BD442
Polarity PNP
Element Configuration Single
Power - Max 36W
Gain Bandwidth Product 3MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 800mV
Max Breakdown Voltage 80V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.14000 $0.14
500 $0.1386 $69.3
1000 $0.1372 $137.2
1500 $0.1358 $203.7
2000 $0.1344 $268.8
2500 $0.133 $332.5
BD442 Product Details

BD442 Overview


DC current gain in this device equals 40 @ 500mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 800mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 80V volts.Product comes in the supplier's device package TO-225AA.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 4A volts can be achieved.

BD442 Features


the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-225AA

BD442 Applications


There are a lot of ON Semiconductor BD442 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News