BD442 Overview

DC current gain in this device equals 40 @ 500mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 800mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 80V volts.Product comes in the supplier's device package TO-225AA.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 4A volts can be achieved.

BD442 Features

the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-225AA

BD442 Applications

There are a lot of ON Semiconductor BD442 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver