BC80840MTF Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.The maximum collector current is 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor BC80840MTF applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
