BC818-40LT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 25V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC818-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC818-40LT1G Applications
There are a lot of ON Semiconductor BC818-40LT1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
