BC81816MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC81816MTF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BC818
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
930μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.374000
$0.374
10
$0.352830
$3.5283
100
$0.332859
$33.2859
500
$0.314018
$157.009
1000
$0.296243
$296.243
BC81816MTF Product Details
BC81816MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 25V volts.Maximum collector currents can be below 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V a collector emitter saturation voltage of 700mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor BC81816MTF applications of single BJT transistors.