BUL742C Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 800mA 3V.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 1A, 3.5A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 15V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BUL742C Features

the DC current gain for this device is 25 @ 800mA 3V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A

BUL742C Applications

There are a lot of STMicroelectronics BUL742C applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver