2SC5964-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Input voltage breakdown is available at 50V volts.A maximum collector current of 3A volts is possible.
2SC5964-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 290mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SC5964-TD-E Applications
There are a lot of ON Semiconductor 2SC5964-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
