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AC848BQ-13

AC848BQ-13

AC848BQ-13

Diodes Incorporated

AC848BQ-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

AC848BQ-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 21 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 310mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:12855 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.449220$0.44922
10$0.423792$4.23792
100$0.399804$39.9804
500$0.377174$188.587
1000$0.355824$355.824

AC848BQ-13 Product Details

AC848BQ-13 Overview


DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 30V.

AC848BQ-13 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

AC848BQ-13 Applications


There are a lot of Diodes Incorporated AC848BQ-13 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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