BCP69-25-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
BCP69-25-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 10mA 1.8V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.08930
$0.1786
5,000
$0.08132
$0.4066
12,500
$0.07334
$0.88008
25,000
$0.06935
$1.73375
62,500
$0.06270
$3.8874
BCP69-25-TP Product Details
BCP69-25-TP Overview
In this device, the DC current gain is 140 @ 10mA 1.8V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
BCP69-25-TP Features
the DC current gain for this device is 140 @ 10mA 1.8V the vce saturation(Max) is 500mV @ 100mA, 1A
BCP69-25-TP Applications
There are a lot of Micro Commercial Co BCP69-25-TP applications of single BJT transistors.