JANTX2N6052 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N6052 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/501
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
150W
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 6A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Current - Collector (Ic) (Max)
12A
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$73.459000
$73.459
10
$69.300943
$693.00943
100
$65.378248
$6537.8248
500
$61.677593
$30838.7965
1000
$58.186408
$58186.408
JANTX2N6052 Product Details
JANTX2N6052 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 6A 3V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.
JANTX2N6052 Features
the DC current gain for this device is 1000 @ 6A 3V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 120mA, 12A the emitter base voltage is kept at 5V
JANTX2N6052 Applications
There are a lot of Microsemi Corporation JANTX2N6052 applications of single BJT transistors.