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JANTX2N6052

JANTX2N6052

JANTX2N6052

Microsemi Corporation

JANTX2N6052 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6052 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/501
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 150W
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 6A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $73.459000 $73.459
10 $69.300943 $693.00943
100 $65.378248 $6537.8248
500 $61.677593 $30838.7965
1000 $58.186408 $58186.408
JANTX2N6052 Product Details

JANTX2N6052 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 6A 3V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.

JANTX2N6052 Features


the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTX2N6052 Applications


There are a lot of Microsemi Corporation JANTX2N6052 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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