NSVBC857CWT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -900mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.A maximum collector current of 100mA volts can be achieved.
NSVBC857CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -900mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
NSVBC857CWT1G Applications
There are a lot of ON Semiconductor NSVBC857CWT1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
