2DD1766Q-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DD1766Q-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DD1766
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
220MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
220MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Height
1.5mm
Length
4.5mm
Width
2.48mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.16448
$0.32896
2DD1766Q-13 Product Details
2DD1766Q-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 220MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2DD1766Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V the vce saturation(Max) is 800mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 220MHz
2DD1766Q-13 Applications
There are a lot of Diodes Incorporated 2DD1766Q-13 applications of single BJT transistors.