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BD241BTU

BD241BTU

BD241BTU

ON Semiconductor

BD241BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD241BTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD241
Power - Max 40W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 3A
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.156718 $2.156718
10 $2.034640 $20.3464
100 $1.919472 $191.9472
500 $1.810822 $905.411
1000 $1.708323 $1708.323
BD241BTU Product Details

BD241BTU Overview


In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 1.2V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD241BTU Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220-3

BD241BTU Applications


There are a lot of ON Semiconductor BD241BTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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