BD241BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD241BTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD241
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
3A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.156718
$2.156718
10
$2.034640
$20.3464
100
$1.919472
$191.9472
500
$1.810822
$905.411
1000
$1.708323
$1708.323
BD241BTU Product Details
BD241BTU Overview
In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 1.2V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD241BTU Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the supplier device package of TO-220-3
BD241BTU Applications
There are a lot of ON Semiconductor BD241BTU applications of single BJT transistors.