BDP950H6327XTSA1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.An input voltage of 60V volts is the breakdown voltage.Collector current can be as low as 3A volts at its maximum.

BDP950H6327XTSA1 Features

the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BDP950H6327XTSA1 Applications

There are a lot of Infineon Technologies BDP950H6327XTSA1 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver