FJP3305H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP3305H2TU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
700V
Max Power Dissipation
75W
Current Rating
4A
Frequency
4MHz
Base Part Number
FJP3305
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
26 @ 1A 5V
Current - Collector Cutoff (Max)
1μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
8
Height
16.51mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.201393
$0.201393
10
$0.189994
$1.89994
100
$0.179239
$17.9239
500
$0.169093
$84.5465
1000
$0.159522
$159.522
FJP3305H2TU Product Details
FJP3305H2TU Overview
In this device, the DC current gain is 26 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 9V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.The part has a transition frequency of 4MHz.During maximum operation, collector current can be as low as 4A volts.
FJP3305H2TU Features
the DC current gain for this device is 26 @ 1A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 1A, 4A the emitter base voltage is kept at 9V the current rating of this device is 4A a transition frequency of 4MHz
FJP3305H2TU Applications
There are a lot of ON Semiconductor FJP3305H2TU applications of single BJT transistors.