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FJP3305H2TU

FJP3305H2TU

FJP3305H2TU

ON Semiconductor

FJP3305H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP3305H2TU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 700V
Max Power Dissipation 75W
Current Rating 4A
Frequency 4MHz
Base Part Number FJP3305
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 26 @ 1A 5V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.201393 $0.201393
10 $0.189994 $1.89994
100 $0.179239 $17.9239
500 $0.169093 $84.5465
1000 $0.159522 $159.522
FJP3305H2TU Product Details

FJP3305H2TU Overview


In this device, the DC current gain is 26 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 9V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.The part has a transition frequency of 4MHz.During maximum operation, collector current can be as low as 4A volts.

FJP3305H2TU Features


the DC current gain for this device is 26 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz

FJP3305H2TU Applications


There are a lot of ON Semiconductor FJP3305H2TU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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