MMBT2369LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT2369LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 350mV
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Turn Off Time-Max (toff)
18ns
Turn On Time-Max (ton)
12ns
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
MMBT2369LT1 Product Details
MMBT2369LT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 350mV DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 1mA, 10mA.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.
MMBT2369LT1 Features
the DC current gain for this device is 40 @ 10mA 350mV the vce saturation(Max) is 250mV @ 1mA, 10mA
MMBT2369LT1 Applications
There are a lot of Rochester Electronics, LLC MMBT2369LT1 applications of single BJT transistors.