PZT3904T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 40V volts.A maximum collector current of 200mA volts can be achieved.
PZT3904T1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
PZT3904T1G Applications
There are a lot of ON Semiconductor PZT3904T1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
