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MJD2955-001

MJD2955-001

MJD2955-001

ON Semiconductor

MJD2955-001 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD2955-001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD2955
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.194821 $0.194821
10 $0.183793 $1.83793
100 $0.173390 $17.339
500 $0.163575 $81.7875
1000 $0.154317 $154.317
MJD2955-001 Product Details

MJD2955-001 Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.2MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.

MJD2955-001 Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJD2955-001 Applications


There are a lot of ON Semiconductor MJD2955-001 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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