MJD2955-001 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD2955-001 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1.75W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-10A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD2955
Pin Count
4
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.194821
$0.194821
10
$0.183793
$1.83793
100
$0.173390
$17.339
500
$0.163575
$81.7875
1000
$0.154317
$154.317
MJD2955-001 Product Details
MJD2955-001 Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.2MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
MJD2955-001 Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is -10A a transition frequency of 2MHz
MJD2955-001 Applications
There are a lot of ON Semiconductor MJD2955-001 applications of single BJT transistors.