SMMBT5401LT1G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 100MHz.Input voltage breakdown is available at 150V volts.Collector current can be as low as 500mA volts at its maximum.
SMMBT5401LT1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SMMBT5401LT1G Applications
There are a lot of ON Semiconductor SMMBT5401LT1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
