SMMBT5401LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBT5401LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
300MHz
Base Part Number
MMBT5401
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.129041
$0.129041
10
$0.121738
$1.21738
100
$0.114846
$11.4846
500
$0.108346
$54.173
1000
$0.102212
$102.212
SMMBT5401LT1G Product Details
SMMBT5401LT1G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 100MHz.Input voltage breakdown is available at 150V volts.Collector current can be as low as 500mA volts at its maximum.
SMMBT5401LT1G Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
SMMBT5401LT1G Applications
There are a lot of ON Semiconductor SMMBT5401LT1G applications of single BJT transistors.