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BUV21G

BUV21G

BUV21G

ON Semiconductor

BUV21G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUV21G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2005
Series SWITCHMODE™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation 250W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Frequency 8MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 8MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 40A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 12A 2V
Current - Collector Cutoff (Max) 3mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3A, 25A
Collector Emitter Breakdown Voltage 200V
Transition Frequency 8MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.36000 $16.36
10 $15.03300 $150.33
100 $12.69610 $1269.61
500 $11.29406 $5647.03
BUV21G Product Details

BUV21G Overview


In this device, the DC current gain is 20 @ 12A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 3A, 25A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 40A.A transition frequency of 8MHz is present in the part.When collector current reaches its maximum, it can reach 40A volts.

BUV21G Features


the DC current gain for this device is 20 @ 12A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 3A, 25A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz

BUV21G Applications


There are a lot of ON Semiconductor BUV21G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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