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FZT955TA

FZT955TA

FZT955TA

Diodes Incorporated

FZT955TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT955TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT955
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -370mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current -4A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.719149 $0.719149
10 $0.678443 $6.78443
100 $0.640040 $64.004
500 $0.603812 $301.906
1000 $0.569634 $569.634
FZT955TA Product Details

FZT955TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -370mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 300mA, 3A.Continuous collector voltages should be kept at -4A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.As you can see, the part has a transition frequency of 110MHz.Input voltage breakdown is available at 140V volts.A maximum collector current of 4A volts is possible.

FZT955TA Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -370mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 110MHz

FZT955TA Applications


There are a lot of Diodes Incorporated FZT955TA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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