FZT955TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT955TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
1997
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-140V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT955
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
370mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-370mV
Max Breakdown Voltage
140V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
-4A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.719149
$0.719149
10
$0.678443
$6.78443
100
$0.640040
$64.004
500
$0.603812
$301.906
1000
$0.569634
$569.634
FZT955TA Product Details
FZT955TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -370mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 300mA, 3A.Continuous collector voltages should be kept at -4A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.As you can see, the part has a transition frequency of 110MHz.Input voltage breakdown is available at 140V volts.A maximum collector current of 4A volts is possible.
FZT955TA Features
the DC current gain for this device is 100 @ 1A 5V a collector emitter saturation voltage of -370mV the vce saturation(Max) is 370mV @ 300mA, 3A the emitter base voltage is kept at 6V the current rating of this device is -4A a transition frequency of 110MHz
FZT955TA Applications
There are a lot of Diodes Incorporated FZT955TA applications of single BJT transistors.