2SD2656FRAT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2656FRAT106 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
1A
Transition Frequency
400MHz
Frequency - Transition
400MHz
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.351600
$0.3516
10
$0.331698
$3.31698
100
$0.312923
$31.2923
500
$0.295210
$147.605
1000
$0.278500
$278.5
2SD2656FRAT106 Product Details
2SD2656FRAT106 Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 350mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Parts of this part have transition frequencies of 400MHz.
2SD2656FRAT106 Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 350mV @ 25mA, 500mA a transition frequency of 400MHz
2SD2656FRAT106 Applications
There are a lot of ROHM Semiconductor 2SD2656FRAT106 applications of single BJT transistors.