MJD117T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.This device can take an input voltage of 100V volts before it breaks down.The maximum collector current is 2A volts.
MJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD117T4G Applications
There are a lot of ON Semiconductor MJD117T4G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
