BC858AWT1G Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 100MHz.Maximum collector currents can be below 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
