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BUJ106A,127

BUJ106A,127

BUJ106A,127

WeEn Semiconductors

BUJ106A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ106A,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 10A
RoHS StatusRoHS Compliant
In-Stock:17627 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.834440$2.83444
10$2.674000$26.74
100$2.522642$252.2642
500$2.379850$1189.925
1000$2.245142$2245.142

BUJ106A,127 Product Details

BUJ106A,127 Overview


This device has a DC current gain of 14 @ 500mA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1.2A, 6A.There is a 400V maximal voltage in the device due to collector-emitter breakdown.

BUJ106A,127 Features


the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1V @ 1.2A, 6A

BUJ106A,127 Applications


There are a lot of WeEn Semiconductors BUJ106A,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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