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BUJ106A,127

  • BUJ106A,127
  • BUJ106A,127

BUJ106A,127

BUJ106A,127

WeEn Semiconductors

BUJ106A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ106A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 10A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.834440 $2.83444
10 $2.674000 $26.74
100 $2.522642 $252.2642
500 $2.379850 $1189.925
1000 $2.245142 $2245.142
BUJ106A,127 Product Details

BUJ106A,127 Overview


This device has a DC current gain of 14 @ 500mA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1.2A, 6A.There is a 400V maximal voltage in the device due to collector-emitter breakdown.

BUJ106A,127 Features


the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1V @ 1.2A, 6A

BUJ106A,127 Applications


There are a lot of WeEn Semiconductors BUJ106A,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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