HRFZ44N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
HRFZ44N Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
UltraFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
120W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C
49A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 20V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.42000
$0.42
500
$0.4158
$207.9
1000
$0.4116
$411.6
1500
$0.4074
$611.1
2000
$0.4032
$806.4
2500
$0.399
$997.5
HRFZ44N Product Details
HRFZ44N Description
HRFZ44N is an N-Channel power MOSFET made with cutting-edge UltraFETTM technology. The lowest feasible on-resistance per silicon area is achieved using this sophisticated process technology, resulting in a remarkable performance. In the avalanche mode, HRFZ44N can tolerate a lot of energy, and the diode has a very short reverse recovery time and a lot of stored charge. The HRFZ44N MOSFET was created for power-efficient applications such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered goods.