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SIHP4N80E-GE3

  • SIHP4N80E-GE3
  • SIHP4N80E-GE3

SIHP4N80E-GE3

SIHP4N80E-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 1.27Ohm @ 2A, 10V ±30V 622pF @ 100V 32nC @ 10V 800V TO-220-3

SOT-23

SIHP4N80E-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 69W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 622pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.230602 $0.230602
10 $0.217549 $2.17549
100 $0.205235 $20.5235
500 $0.193618 $96.809
1000 $0.182659 $182.659
SIHP4N80E-GE3 Product Details

SIHP4N80E-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 622pF @ 100V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SIHP4N80E-GE3 Features


a 800V drain to source voltage (Vdss)


SIHP4N80E-GE3 Applications


There are a lot of Vishay Siliconix
SIHP4N80E-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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