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FDC6333C

  • FDC6333C
  • FDC6333C

FDC6333C

FDC6333C

ON Semiconductor

FDC6333C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDC6333C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 95MOhm
Subcategory Other Transistors
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 2.5A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 4.5 ns
Power - Max 700mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 282pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.5A 2A
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.17647 $0.52941
6,000 $0.16508 $0.99048
15,000 $0.15370 $2.3055
30,000 $0.14573 $4.3719
FDC6333C Product Details

FDC6333C Description


The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.



FDC6333C Features


  • Q1 2.5 A, 30V

  • RDS(on) = 95 mΩ@ VGS = 10 V

  • RDS(on) = 150 mΩ @ VGS = 4.5 V

  • Q2 –2.0 A, 30V.

  • RDS(on) = 150 mΩ@ VGS = -10 V

  • RDS(on) = 220 mΩ @ VGS = -4.5 V

  • Low gate charge

  • High-performance trench technology for extremely low RDS(ON)

  • SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).



FDC6333C Applications


  • Industrial

  • Power Management

  • DC/DC converter

  • Load switch

  • LCD display inverter


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