NVMFD5C470NLWFT1G

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NVMFD5C470NLWFT1G

Manufacturer part number:NVMFD5C470NLWFT1G

Manufacturer:ON Semiconductor

Description:NVMFD5C470NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVMFD5C470NLWFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	48 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	3W Ta 24W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	11.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds	590pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Drain to Source Voltage (Vdss)	40V
Drain-source On Resistance-Max	0.0178Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	49 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant