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NVMFD5C470NLWFT1G

NVMFD5C470NLWFT1G

NVMFD5C470NLWFT1G

ON Semiconductor

NVMFD5C470NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NVMFD5C470NLWFT1G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W Ta 24W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 0.0178Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 49 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $25.612400 $25.6124
10 $24.162642 $241.62642
100 $22.794945 $2279.4945
500 $21.504665 $10752.3325
1000 $20.287420 $20287.42
NVMFD5C470NLWFT1G Product Details

NVMFD5C470NLWFT1G Description


The twin PQFN packaging of this device houses two specialized N-Channel MOSFETs. To make it easier to insert and route synchronous buck converters, the switch node has been internally connected. For maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



NVMFD5C470NLWFT1G Features


? Small Footprint for Compact Design (5x6 mm)


? Reduced Conduction Losses through Low RDS(on)


? Low QG and Capacitance for Driver Loss Reduction


? Wettable Flank Option for Enhanced Optical Inspection (NVMFD5C470NLWF)


? Capable of PPAP and qualified under AEC-Q101


? These devices are RoHS compliant and Pb-free.



NVMFD5C470NLWFT1G Applications


Switching applications


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