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FDD6680A

  • FDD6680A
  • FDD6680A

FDD6680A

FDD6680A

ON Semiconductor

FDD6680A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD6680A Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FDD6680
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.8W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 55A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 205 mJ
REACH SVHC Unknown
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.41000 $1.41
500 $1.3959 $697.95
1000 $1.3818 $1381.8
1500 $1.3677 $2051.55
2000 $1.3536 $2707.2
2500 $1.3395 $3348.75
FDD6680A Product Details

FDD6680A Description


The FDD6680A is a SyncFET? N-channel MOSFET produced using the PowerTrench? process. The onsemi FDD6680A is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET FDD6680A is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.



FDD6680A Features


  • 55A, 30V

  • RDS(ON) = 10.5 mΩ @ VGS = 10 V

  • RDS(ON) = 13.0 mΩ @ VGS = 4.5 V

  • Includes SyncFET? Schottky body diode

  • Low gate charge (21nC typical)

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDD6680A Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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