FDMC612PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMC612PZ Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
180mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.3W Ta 26W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
26 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.4m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7995pF @ 10V
Current - Continuous Drain (Id) @ 25°C
14A Ta
Gate Charge (Qg) (Max) @ Vgs
74nC @ 4.5V
Rise Time
52ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
81 ns
Turn-Off Delay Time
96 ns
Continuous Drain Current (ID)
14A
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
40A
Pulsed Drain Current-Max (IDM)
50A
DS Breakdown Voltage-Min
20V
Height
750μm
Length
3.3mm
Width
3.3mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.845202
$0.845202
10
$0.797360
$7.9736
100
$0.752226
$75.2226
500
$0.709648
$354.824
1000
$0.669479
$669.479
FDMC612PZ Product Details
FDMC612PZ Description
Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
FDMC612PZ Features
At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)
FDMC612PZ Applications
Battery Management is a term that refers to the process of managing a battery.