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FDMC612PZ

  • FDMC612PZ
  • FDMC612PZ

FDMC612PZ

FDMC612PZ

ON Semiconductor

FDMC612PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC612PZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 180mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.3W Ta 26W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7995pF @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V
Rise Time 52ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 20V
Height 750μm
Length 3.3mm
Width 3.3mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.845202 $0.845202
10 $0.797360 $7.9736
100 $0.752226 $75.2226
500 $0.709648 $354.824
1000 $0.669479 $669.479
FDMC612PZ Product Details

FDMC612PZ Description


Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.



FDMC612PZ Features


  • At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.

  • At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.

  • High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).

  • Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)



FDMC612PZ Applications


  • Battery Management is a term that refers to the process of managing a battery.

  • Activate the load switch


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