Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Number of Pins	264
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	520W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	44 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	43m Ω @ 66A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	18600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	63A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	63A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.043Ohm
Pulsed Drain Current-Max (IDM)	330A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	3000 mJ
Height	26.42mm
Length	20.29mm
Width	5.31mm
RoHS Status	ROHS3 Compliant

IXFL132N50P3

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