STGP10H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP10H60DF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
115W
Base Part Number
STGP10
Element Configuration
Single
Input Type
Standard
Power - Max
115W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
20A
Reverse Recovery Time
107 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Test Condition
400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 10A
IGBT Type
Trench Field Stop
Gate Charge
57nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
19.5ns/103ns
Switching Energy
83μJ (on), 140μJ (off)
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.09000
$2.09
50
$1.79040
$89.52
100
$1.54320
$154.32
500
$1.28950
$644.75
1,000
$1.08915
$1.08915
2,500
$1.02237
$2.04474
5,000
$1.01124
$5.0562
STGP10H60DF Product Details
STGP10H60DF Description
These devices STGP10H60DFare IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.